PART |
Description |
Maker |
W27C010 |
128K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond
|
IS25C128A-2GLI IS25C128A-2GLI-TR IS25C128A-3GLI IS |
128K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
|
Integrated Silicon Solution, Inc 天津新技术产业园区管理委员会
|
W27E010 W27E010P-55 W27E010P-45 W27E010P-90 W27E01 |
128Kx8 EEPROM 128K X 8 EEPROM 12V, 45 ns, PDIP32 128Kx8 EEPROM 128K X 8 EEPROM 12V, 45 ns, PQCC32 From old datasheet system 128K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics, Corp. Winbond Electronics Corp
|
24AA128 24LC128 24FC128 24AA128-I/MF 24AA128-I/MS |
16K*8(128Kbit) Serial Electrically Erasable PROM(EEPROM) 128K I2C CMOS Serial EEPROM
|
MICROCHIP[Microchip Technology]
|
BR24L04FJ-W BR24L04FVM-W BR24L04FV-W BR24L04F-W BR |
512】8 bit electrically erasable PROM 5128 bit electrically erasable PROM
|
ROHM[Rohm]
|
HN58X25128TIE HN58X25128FPIE |
Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory
|
Renesas Electronics Corporation
|
24C64 TU24C64CP2 TU24C64CP3 TU24C64CS2 TU24C64CS3 |
CMOSIC2-WIREBUS64KELECTRICALLYERASABLEPROGRAMMABLEROM8KX8BITEEPROM From old datasheet system CMOS I?C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM CMOS I2C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
|
Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
TC57512AD-15 TC57512AD-20 |
65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY 65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
|
ETC List of Unclassifed Manufacturers
|
28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
ISPGAL22LV10-7LJ ISPGAL22LV10-7LJI ISPGAL22LV10-7L |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Lattice Semiconductor, Corp.
|